Parametric results for: FT5777M under Power Bipolar Transistors

All Filters Case Connection Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Surface Mount

ISOLATED 2

2 hits Apply

Collector Current-Max (IC) (1)

3 A 2

2 hits Apply

Collector-Emitter Voltage-Max (1)

100 V 2

2 hits Apply

Configuration (1)

4 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR 2

2 hits Apply

DC Current Gain-Min (hFE) (1)

500.0 2

2 hits Apply

R-PSFM-T12 2

2 hits Apply

Manufacturer (2)

FUJITSU Limited 1 FUJITSU Semiconductor Limited 1

2 hits Apply

Number of Elements (1)

4 2

2 hits Apply

Number of Terminals (1)

12 2

2 hits Apply

150.0 °C 2

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

FLANGE MOUNT 2

2 hits Apply

Obsolete 2

2 hits Apply

Polarity/Channel Type (1)

NPN AND PNP 2

2 hits Apply

21 W 2

2 hits Apply

Surface Mount (1)

NO 2

2 hits Apply