Parametric results for: G2R1000MT33J under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 1

1 hit Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

1 hit Apply

DS Breakdown Voltage-Min (1)

3.3 kV 1

1 hit Apply

Drain Current-Max (ID) (1)

4 A 1

1 hit Apply

Drain-source On Resistance-Max (1)

1.2 Ω 1

1 hit Apply

METAL-OXIDE SEMICONDUCTOR 1

1 hit Apply

2.4 pF 1

1 hit Apply

TO-263 1

1 hit Apply

R-PSSO-G7 1

1 hit Apply

Manufacturer (1)

GeneSic Semiconductor Inc 1

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Number of Elements (1)

1 1

1 hit Apply

Number of Terminals (1)

7 1

1 hit Apply

ENHANCEMENT MODE 1

1 hit Apply

175.0 °C 1

1 hit Apply

-55.0 °C 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

SMALL OUTLINE 1

1 hit Apply

Active 1

1 hit Apply

Polarity/Channel Type (1)

N-CHANNEL 1

1 hit Apply

74 W 1

1 hit Apply

Surface Mount (1)

YES 1

1 hit Apply