Parametric results for: HUF76013D3S under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 8

9 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 8

9 hits Apply

DS Breakdown Voltage-Min (1)

20 V 8

9 hits Apply

Drain Current-Max (ID) (1)

20 A 8

9 hits Apply

Drain-source On Resistance-Max (1)

30 mΩ 8

9 hits Apply

METAL-OXIDE SEMICONDUCTOR 8

9 hits Apply

TO-252AA 8

9 hits Apply

R-PSSO-G2 8

9 hits Apply

e0 2 e3 5

9 hits Apply

Manufacturer (3)

Fairchild Semiconductor Corporation 4 Intersil Corporation 2 Rochester Electronics LLC 3

9 hits Apply

1 3 NOT SPECIFIED 1

9 hits Apply

Number of Elements (1)

1 8

9 hits Apply

Number of Terminals (1)

2 8

9 hits Apply

ENHANCEMENT MODE 8

9 hits Apply

150.0 °C 5

9 hits Apply

PLASTIC/EPOXY 8

9 hits Apply

RECTANGULAR 8

9 hits Apply

SMALL OUTLINE 8

9 hits Apply

Active 3 Obsolete 4 Transferred 2

9 hits Apply

Yes 3

9 hits Apply

260 2 NOT SPECIFIED 1

9 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 8

9 hits Apply

50 W 5

9 hits Apply

Surface Mount (1)

YES 8

9 hits Apply