Parametric results for: IPB100N04S4 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

280.0 mJ 2 320.0 mJ 2

Min (mJ) - Max (mJ)

4 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 4

4 hits Apply

DS Breakdown Voltage-Min (1)

40 V 4

4 hits Apply

Drain Current-Max (ID) (1)

100 A 4

4 hits Apply

Drain-source On Resistance-Max (2)

2.2 mΩ 2 2.4 mΩ 2

Min (Ω) - Max (Ω)

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

TO-263AB 4

4 hits Apply

R-PSSO-G2 4

4 hits Apply

e3 1

4 hits Apply

Manufacturer (1)

Infineon Technologies AG 4

4 hits Apply

1 3

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

2 4

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

175.0 °C 2

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

SMALL OUTLINE 4

4 hits Apply

Active 2 Obsolete 2

4 hits Apply

No 1 Yes 1

4 hits Apply

260 1 NOT SPECIFIED 2

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

231 W 1

4 hits Apply

Surface Mount (1)

YES 4

4 hits Apply