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IPB108N15N3GATMA1
Infineon Technologies AG
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$2.7906 | No | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 150 V | 1 | 83 A | 10.8 mΩ | 330 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 332 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | D2PAK | SMALL OUTLINE, R-PSSO-G2 | 4 | not_compliant | EAR99 | Infineon | |||
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IPB108N15N3GXT
Infineon Technologies AG
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$3.1751 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 150 V | 1 | 83 A | 10.8 mΩ | 330 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 332 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | 175 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PSSO-G2 | compliant | EAR99 | |||||||||||
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IPB108N15N3G
Infineon Technologies AG
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Check for Price | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 150 V | 1 | 83 A | 10.8 mΩ | 330 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 214 W | 332 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 245 | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | D2PAK | SMALL OUTLINE, R-PSSO-G2 | 4 | not_compliant | EAR99 |