Parametric results for: IPB160N04S2L03ATMA2 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

ULTRA-LOW RESISTANCE 1

1 hit Apply

810.0 mJ 1

1 hit Apply

DRAIN 1

1 hit Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

1 hit Apply

DS Breakdown Voltage-Min (1)

40 V 1

1 hit Apply

Drain Current-Max (ID) (1)

160 A 1

1 hit Apply

Drain-source On Resistance-Max (1)

3.7 mΩ 1

1 hit Apply

METAL-OXIDE SEMICONDUCTOR 1

1 hit Apply

TO-263 1

1 hit Apply

R-PSSO-G6 1

1 hit Apply

e3 1

1 hit Apply

Manufacturer (1)

Infineon Technologies AG 1

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1 1

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Number of Elements (1)

1 1

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Number of Terminals (1)

6 1

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ENHANCEMENT MODE 1

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PLASTIC/EPOXY 1

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RECTANGULAR 1

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SMALL OUTLINE 1

1 hit Apply

Active 1

1 hit Apply

Yes 1

1 hit Apply

NOT SPECIFIED 1

1 hit Apply

Polarity/Channel Type (1)

N-CHANNEL 1

1 hit Apply

Surface Mount (1)

YES 1

1 hit Apply