Parametric results for: IRF7303 under Power Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE 3 HIGH RELIABILITY 4 LOGIC LEVEL COMPATIBLE 4 ULTRA LOW RESISTANCE 7 ULTRA-LOW RESISTANCE 1

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Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 19

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DS Breakdown Voltage-Min (1)

30 V 19

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Drain Current-Max (ID) (2)

4 A 2 4.9 A 19

Min (A) - Max (A)

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Drain-source On Resistance-Max (1)

50 mΩ 19

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METAL-OXIDE SEMICONDUCTOR 21

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MS-012AA 13

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R-PDSO-G8 19

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e0 3 e3 12

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Manufacturer (2)

Infineon Technologies AG 10 International Rectifier 11

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1 13 2 1

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Number of Elements (1)

2 19

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Number of Terminals (1)

8 19

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ENHANCEMENT MODE 21

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150.0 °C 13

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PLASTIC/EPOXY 19

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RECTANGULAR 19

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SMALL OUTLINE 19

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Active 6 End Of Life 1 Obsolete 5 Transferred 9

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No 2 Yes 6

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245 1 260 7 NOT SPECIFIED 2

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Polarity/Channel Type (1)

N-CHANNEL 21

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1.4 W 3 2 W 7

Min (W) - Max (W)

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Surface Mount (1)

YES 21

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