Parametric results for: IRF7451 under Power Field-Effect Transistors

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Manufacturer Part Number: irf7451
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IRF7451TRPBF
Infineon Technologies AG
$1.0752 Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 8 150 V 1 3.6 A 90 mΩ 210 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 29 A SWITCHING SILICON MS-012AA R-PDSO-G8 1 NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING DUAL INFINEON TECHNOLOGIES AG GREEN, SOP-8 compliant EAR99 Infineon
IRF7451
International Rectifier
Check for Price No No Transferred N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 8 150 V 1 3.6 A 90 mΩ 210 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 2.5 W 28 A SWITCHING SILICON MS-012AA R-PDSO-G8 e0 Not Qualified 1 150 °C PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN LEAD GULL WING DUAL INTERNATIONAL RECTIFIER CORP SMALL OUTLINE, R-PDSO-G8 compliant EAR99 SOIC 8
IRF7451TR
International Rectifier
Check for Price No Obsolete N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 8 150 V 1 3.6 A 90 mΩ 210 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 28 A SWITCHING SILICON MS-012AA R-PDSO-G8 e0 Not Qualified PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN LEAD GULL WING DUAL INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC SMALL OUTLINE, R-PDSO-G8 unknown EAR99 SOIC 8
IRF7451PBF
International Rectifier
Check for Price Yes Yes Transferred N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 8 150 V 1 3.6 A 90 mΩ 210 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 2.5 W 29 A SWITCHING SILICON MS-012AA R-PDSO-G8 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL INTERNATIONAL RECTIFIER CORP LEAD FREE, SO-8 unknown EAR99 SOIC 8
IRF7451TR
Infineon Technologies AG
Check for Price No Obsolete N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 8 150 V 1 3.6 A 90 mΩ 210 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 28 A SWITCHING SILICON MS-012AA R-PDSO-G8 e3 Not Qualified 2 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL INFINEON TECHNOLOGIES AG SO-8 compliant EAR99 Infineon
IRF7451TRPBF
International Rectifier
Check for Price Yes Yes Transferred N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 8 150 V 1 3.6 A 90 mΩ 210 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 2.5 W 28 A SWITCHING SILICON MS-012AA R-PDSO-G8 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL INTERNATIONAL RECTIFIER CORP SO-8 compliant EAR99 SOIC 8
IRF7451PBF
Infineon Technologies AG
Check for Price Yes Obsolete N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 8 150 V 1 3.6 A 90 mΩ 210 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 2.5 W 29 A SWITCHING SILICON MS-012AA R-PDSO-G8 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL INFINEON TECHNOLOGIES AG SMALL OUTLINE, R-PDSO-G8 compliant EAR99 Infineon
IRF7451
Infineon Technologies AG
Check for Price No Obsolete N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 8 150 V 1 3.6 A 90 mΩ 210 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 28 A SWITCHING SILICON MS-012AA R-PDSO-G8 e0 Not Qualified 1 150 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin/Lead (Sn/Pb) GULL WING DUAL INFINEON TECHNOLOGIES AG SO-8 not_compliant EAR99 Infineon