Parametric results for: IRFF123 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

36.0 mJ 3

12 hits Apply

DRAIN 6

12 hits Apply

Configuration (3)

SINGLE 4 Single 1 SINGLE WITH BUILT-IN DIODE 6

12 hits Apply

DS Breakdown Voltage-Min (2)

60 V 2 80 V 6

Min (V) - Max (V)

12 hits Apply

Drain Current-Max (Abs) (ID) (1)

5 A 1

12 hits Apply

Drain Current-Max (ID) (1)

5 A 10

12 hits Apply

Drain-source On Resistance-Max (1)

400 mΩ 8

12 hits Apply

METAL-OXIDE SEMICONDUCTOR 11

12 hits Apply

100 pF 2

12 hits Apply

TO-205AF 6 TO-39 2

12 hits Apply

O-MBCY-W3 8

12 hits Apply

e0 9

12 hits Apply

Manufacturer (9)

Freescale Semiconductor 1 General Electric Solid State 1 Harris Semiconductor 2 International Rectifier 1 Intersil Corporation 2 Motorola Mobility LLC 1 Motorola Semiconductor Products 1 Rochester Electronics LLC 1 Thomson Consumer Electronics 2

12 hits Apply

Number of Elements (1)

1 10

12 hits Apply

Number of Terminals (1)

3 8

12 hits Apply

ENHANCEMENT MODE 11

12 hits Apply

150.0 °C 10

12 hits Apply

-55.0 °C 1

12 hits Apply

METAL 8

12 hits Apply

ROUND 8

12 hits Apply

CYLINDRICAL 8

12 hits Apply

Active 1 Obsolete 9 Transferred 2

12 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 11

12 hits Apply

20 W 5

12 hits Apply

20 W 10

12 hits Apply

Surface Mount (1)

NO 11

12 hits Apply