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IRFM120ATF
onsemi
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$0.5215 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 4 | 100 V | 1 | 2.3 A | 200 mΩ | 123 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 2.4 W | 18 A | SWITCHING | SILICON | R-PDSO-G4 | e3 | Not Qualified | 1 | 150 °C | 250 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | ONSEMI | 318H-01 | not_compliant | EAR99 | onsemi | |||||||
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IRFM120ATF
Fairchild Semiconductor Corporation
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Check for Price | Yes | Yes | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 4 | 100 V | 1 | 2.3 A | 200 mΩ | 123 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 2.4 W | 18 A | SWITCHING | SILICON | R-PDSO-G4 | e3 | Not Qualified | 1 | 150 °C | 250 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | FAIRCHILD SEMICONDUCTOR CORP | MOLDED PACKAGE, SOT-223, 4 LEAD | not_compliant | EAR99 | SOT-223 | 4 | 8541.29.00.95 | ||||
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IRFM120ATF_NL
Fairchild Semiconductor Corporation
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Check for Price | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 4 | 100 V | 1 | 2.3 A | 200 mΩ | 123 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 18 A | SWITCHING | SILICON | R-PDSO-G4 | e3 | Not Qualified | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | DUAL | FAIRCHILD SEMICONDUCTOR CORP | compliant | EAR99 | 4 | SMALL OUTLINE, R-PDSO-G4 |