Parametric results for: JAN2N6764 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

150.0 mJ 6

8 hits Apply

DRAIN 6 ISOLATED 2

8 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 8

8 hits Apply

DS Breakdown Voltage-Min (1)

100 V 8

8 hits Apply

Drain Current-Max (ID) (1)

38 A 8

8 hits Apply

Drain-source On Resistance-Max (2)

55 mΩ 7 65 mΩ 1

Min (Ω) - Max (Ω)

8 hits Apply

METAL-OXIDE SEMICONDUCTOR 8

8 hits Apply

500 pF 1

8 hits Apply

TO-204AE 6 TO-254AA 2

8 hits Apply

O-MBFM-P2 6 S-XSFM-P3 2

8 hits Apply

e0 2

8 hits Apply

Manufacturer (6)

Defense Logistics Agency 2 International Rectifier 1 Microsemi Corporation 2 Motorola Mobility LLC 1 Motorola Semiconductor Products 1 Unitrode Corporation 1

8 hits Apply

Number of Elements (1)

1 8

8 hits Apply

Number of Terminals (2)

2 6 3 2

8 hits Apply

ENHANCEMENT MODE 8

8 hits Apply

150.0 °C 4

8 hits Apply

-55.0 °C 1

8 hits Apply

METAL 6 UNSPECIFIED 2

8 hits Apply

ROUND 6 SQUARE 2

8 hits Apply

FLANGE MOUNT 8

8 hits Apply

Active 2 Obsolete 6

8 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 8

8 hits Apply

150 W 1

8 hits Apply

150 W 3

8 hits Apply

Surface Mount (1)

NO 8

8 hits Apply