Parametric results for: K6R1008V1C-TL10 under SRAMs

All Filters Access Time-Max JESD-30 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Package Body Material Package Code Package Shape Package Style Supply Voltage-Nom (Vsup) Access Time-Max (1)

10 ns 1

1 hit Apply

R-PDSO-G32 1

1 hit Apply

20.95 mm 1

1 hit Apply

Manufacturer (1)

Samsung Semiconductor 1

1 hit Apply

Memory Density (1)

1.0486 Mbit 1

1 hit Apply

STANDARD SRAM 1

1 hit Apply

Memory Width (1)

8 1

1 hit Apply

1.0 1

1 hit Apply

32 1

1 hit Apply

131.072 k 1

1 hit Apply

128000.0 1

1 hit Apply

ASYNCHRONOUS 1

1 hit Apply

70.0 °C 1

1 hit Apply

0.0 °C 1

1 hit Apply

Organization (1)

128KX8 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

TSOP2 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

SMALL OUTLINE, THIN PROFILE 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

3.3 V 1

1 hit Apply