Parametric results for: KM93C46VG under EEPROMs

All Filters Additional Feature Clock Frequency-Max (fCLK) Data Retention Time-Min Endurance JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup)

100000 ERASE/WRITE CYCLES; DATA RETENTION = 10 YEARS 4

4 hits Apply

Clock Frequency-Max (fCLK) (1)

250 kHz 4

4 hits Apply

10 4

4 hits Apply

100000.0 Write/Erase Cycles 4

4 hits Apply

R-PDSO-G8 4

4 hits Apply

e0 4

4 hits Apply

5.02 mm 4

4 hits Apply

Manufacturer (1)

Samsung Semiconductor 4

4 hits Apply

Memory Density (1)

1.024 kbit 4

4 hits Apply

EEPROM 4

4 hits Apply

Memory Width (1)

16 4

4 hits Apply

1.0 4

4 hits Apply

8 4

4 hits Apply

64 words 4

4 hits Apply

64.0 4

4 hits Apply

SYNCHRONOUS 4

4 hits Apply

70.0 °C 2 85.0 °C 2

Min (°C) - Max (°C)

4 hits Apply

-40.0 °C 2 0.0 °C 2

Min (°C) - Max (°C)

4 hits Apply

Organization (1)

64X16 4

4 hits Apply

3-STATE 4

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

SOP 4

4 hits Apply

SOP8,.25 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

SMALL OUTLINE 4

4 hits Apply

Supply Voltage-Nom (Vsup) (1)

5 V 4

4 hits Apply