Parametric results for: M466S0924BT0-C10 under DRAMs

All Filters Access Mode Access Time-Max Clock Frequency-Max (fCLK) I/O Type JESD-30 Code Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Mode (1)

FOUR BANK PAGE BURST 1

1 hit Apply

Access Time-Max (1)

7 ns 1

1 hit Apply

Clock Frequency-Max (fCLK) (1)

100 MHz 1

1 hit Apply

COMMON 1

1 hit Apply

R-XDMA-N144 1

1 hit Apply

Manufacturer (1)

Samsung Semiconductor 1

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Memory Density (1)

536.8709 Mbit 1

1 hit Apply

SYNCHRONOUS DRAM MODULE 1

1 hit Apply

Memory Width (1)

64 1

1 hit Apply

1 1

1 hit Apply

1.0 1

1 hit Apply

1 1

1 hit Apply

144 1

1 hit Apply

8.3886 M 1

1 hit Apply

8000000.0 1

1 hit Apply

SYNCHRONOUS 1

1 hit Apply

70.0 °C 1

1 hit Apply

0.0 °C 1

1 hit Apply

Organization (1)

8MX64 1

1 hit Apply

3-STATE 1

1 hit Apply

UNSPECIFIED 1

1 hit Apply

DIMM 1

1 hit Apply

DIMM144,32 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

MICROELECTRONIC ASSEMBLY 1

1 hit Apply

Refresh Cycles (1)

4096 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

3.3 V 1

1 hit Apply