Parametric results for: MTM45N15 under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

DRAIN 2

4 hits Apply

Configuration (3)

SINGLE 1 Single 1 SINGLE WITH BUILT-IN DIODE 2

4 hits Apply

DS Breakdown Voltage-Min (2)

50 V 1 150 V 2

Min (V) - Max (V)

4 hits Apply

Drain Current-Max (Abs) (ID) (1)

45 A 1

4 hits Apply

Drain Current-Max (ID) (1)

45 A 3

4 hits Apply

Drain-source On Resistance-Max (1)

60 mΩ 2

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

500 pF 2

4 hits Apply

TO-204AE 2

4 hits Apply

O-MBFM-P2 2

4 hits Apply

e0 2

4 hits Apply

Manufacturer (4)

Freescale Semiconductor 1 Motorola Mobility LLC 1 Motorola Semiconductor Products 1 New Jersey Semiconductor Products Inc 1

4 hits Apply

Number of Elements (1)

1 3

4 hits Apply

Number of Terminals (1)

2 2

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 3

4 hits Apply

METAL 2

4 hits Apply

ROUND 2

4 hits Apply

FLANGE MOUNT 2

4 hits Apply

Contact Manufacturer 1 Obsolete 3

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

250 W 2

4 hits Apply

250 W 3

4 hits Apply

Surface Mount (1)

NO 3

4 hits Apply