Parametric results for: NDH8502P under Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Configuration (2)

SEPARATE, 2 ELEMENTS 3 SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 9

12 hits Apply

DS Breakdown Voltage-Min (1)

30 V 12

12 hits Apply

Drain Current-Max (ID) (2)

2.2 A 8 2.3 A 4

Min (A) - Max (A)

12 hits Apply

Drain-source On Resistance-Max (2)

110 mΩ 9 180 mΩ 3

Min (Ω) - Max (Ω)

12 hits Apply

METAL-OXIDE SEMICONDUCTOR 12

12 hits Apply

R-PDSO-G8 12

12 hits Apply

e0 1 e3 2

12 hits Apply

Manufacturer (3)

Fairchild Semiconductor Corporation 5 Rochester Electronics LLC 1 Texas Instruments 6

12 hits Apply

1 2

12 hits Apply

Number of Elements (1)

2 12

12 hits Apply

Number of Terminals (1)

8 12

12 hits Apply

ENHANCEMENT MODE 12

12 hits Apply

150.0 °C 8

12 hits Apply

PLASTIC/EPOXY 12

12 hits Apply

RECTANGULAR 12

12 hits Apply

SMALL OUTLINE 12

12 hits Apply

Active 1 Obsolete 10 Transferred 1

12 hits Apply

Yes 1

12 hits Apply

260 1

12 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 12

12 hits Apply

900 mW 6

12 hits Apply

900 mW 2

12 hits Apply

Surface Mount (1)

YES 12

12 hits Apply