Parametric results for: NE3509M04 under RF Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Power Gain-Min (Gp) Surface Mount Configuration (1)

SINGLE 4

10 hits Apply

DS Breakdown Voltage-Min (2)

3 V 4 4 V 6

Min (V) - Max (V)

10 hits Apply

Drain Current-Max (ID) (2)

20 mA 4 60 mA 6

Min (A) - Max (A)

10 hits Apply

HETERO-JUNCTION 10

10 hits Apply

Highest Frequency Band (1)

S BAND 10

10 hits Apply

R-PDSO-F4 10

10 hits Apply

e0 4 e6 5

10 hits Apply

Manufacturer (2)

NEC Electronics Group 5 Renesas Electronics Corporation 5

10 hits Apply

Number of Elements (1)

1 10

10 hits Apply

Number of Terminals (1)

4 10

10 hits Apply

DEPLETION MODE 10

10 hits Apply

150.0 °C 3

10 hits Apply

PLASTIC/EPOXY 10

10 hits Apply

RECTANGULAR 10

10 hits Apply

SMALL OUTLINE 10

10 hits Apply

Obsolete 5 Transferred 5

10 hits Apply

No 2 Yes 3

10 hits Apply

NOT SPECIFIED 1

10 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 10

10 hits Apply

150 mW 3

10 hits Apply

Power Gain-Min (Gp) (1)

16.0 dB 4

10 hits Apply

Surface Mount (1)

YES 10

10 hits Apply