Parametric results for: PHB108NQ03LT/T3 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

LOGIC LEVEL COMPATIBLE 3

4 hits Apply

180.0 mJ 3

4 hits Apply

DRAIN 3

4 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 3

4 hits Apply

DS Breakdown Voltage-Min (1)

25 V 3

4 hits Apply

Drain Current-Max (ID) (1)

75 A 4

4 hits Apply

Drain-source On Resistance-Max (1)

7.5 mΩ 3

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

R-PSSO-G2 3

4 hits Apply

e3 4

4 hits Apply

Manufacturer (3)

Nexperia 1 NXP Semiconductors 2 Philips Semiconductors 1

4 hits Apply

1 4

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

2 3

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

175.0 °C 2

4 hits Apply

PLASTIC/EPOXY 3

4 hits Apply

RECTANGULAR 3

4 hits Apply

SMALL OUTLINE 3

4 hits Apply

Obsolete 3 Transferred 1

4 hits Apply

245 2

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

180 W 2

4 hits Apply

Surface Mount (1)

YES 4

4 hits Apply