Parametric results for: STP20NM60 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

650.0 mJ 2 700.0 mJ 1

Min (mJ) - Max (mJ)

4 hits Apply

ISOLATED 1

4 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 4

4 hits Apply

DS Breakdown Voltage-Min (1)

600 V 4

4 hits Apply

Drain Current-Max (ID) (1)

20 A 4

4 hits Apply

Drain-source On Resistance-Max (1)

290 mΩ 4

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

TO-220AB 4

4 hits Apply

R-PSFM-T3 4

4 hits Apply

e3 4

4 hits Apply

Manufacturer (1)

STMicroelectronics 4

4 hits Apply

1 1

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

3 4

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 4

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

FLANGE MOUNT 4

4 hits Apply

Active 3 Obsolete 1

4 hits Apply

245 1 NOT SPECIFIED 1

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

45 W 1 192 W 3

Min (W) - Max (W)

4 hits Apply

Surface Mount (1)

NO 4

4 hits Apply