Parametric results for: TK150F04K3 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

234.0 mJ 1 238.0 mJ 1

Min (mJ) - Max (mJ)

6 hits Apply

DRAIN 2

6 hits Apply

Configuration (2)

SINGLE 4 SINGLE WITH BUILT-IN DIODE 2

6 hits Apply

DS Breakdown Voltage-Min (1)

40 V 2

6 hits Apply

Drain Current-Max (ID) (1)

150 A 6

6 hits Apply

Drain-source On Resistance-Max (2)

2.1 mΩ 1 3.2 mΩ 1

Min (Ω) - Max (Ω)

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

R-PSSO-G2 2

6 hits Apply

Manufacturer (1)

Toshiba America Electronic Components 6

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (1)

2 2

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

175.0 °C 5

6 hits Apply

PLASTIC/EPOXY 2

6 hits Apply

RECTANGULAR 2

6 hits Apply

SMALL OUTLINE 2

6 hits Apply

Active 2 Not Recommended 3 Obsolete 1

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

300 W 5

6 hits Apply

Surface Mount (1)

YES 6

6 hits Apply