Parametric results for: TN28F010-120 under Flash Memories

All Filters Access Time-Max Command User Interface Data Polling Endurance JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup) Access Time-Max (1)

120 ns 2

2 hits Apply

YES 1

2 hits Apply

NO 1

2 hits Apply

10000.0 Write/Erase Cycles 1

2 hits Apply

R-PQCC-J32 2

2 hits Apply

e0 2

2 hits Apply

13.97 mm 2

2 hits Apply

Manufacturer (2)

Intel Corporation 1 Rochester Electronics LLC 1

2 hits Apply

Memory Density (1)

1.0486 Mbit 2

2 hits Apply

FLASH 2

2 hits Apply

Memory Width (1)

8 2

2 hits Apply

1.0 2

2 hits Apply

32 2

2 hits Apply

131.072 k 2

2 hits Apply

128000.0 2

2 hits Apply

ASYNCHRONOUS 2

2 hits Apply

85.0 °C 2

2 hits Apply

-40.0 °C 2

2 hits Apply

Organization (1)

128KX8 2

2 hits Apply

3-STATE 1

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

QCCJ 2

2 hits Apply

LDCC32,.5X.6 1

2 hits Apply

RECTANGULAR 2

2 hits Apply

CHIP CARRIER 2

2 hits Apply

Supply Voltage-Nom (Vsup) (1)

5 V 2

2 hits Apply