Register or Sign In
Parametric » Memory » Flash Memories

Parametric results for: TN28F010-90 under Flash Memories

Filter Your Search

1 - 2 of 2 results

|
2 hits
2 hits
2 hits
2 hits
2 hits
2 hits
2 hits
2 hits
2 hits
2 hits
2 hits
2 hits
2 hits
2 hits
2 hits
2 hits
2 hits
2 hits
2 hits
2 hits
2 hits
2 hits
2 hits
2 hits
2 hits
2 hits
2 hits
Manufacturer Part Number: tn28f01090
Select parts from the table below to compare.
 Compare
Compare
TN28F010-90
 Intel Corporation 		Check for Price No No Obsolete 1.0486 Mbit 8 128KX8 5 V 90 ns FLASH 100000 ERASE/PROGRAM CYCLES YES NO 100000 Write/Erase Cycles 1 128000 131.072 k ASYNCHRONOUS 3-STATE PARALLEL 12 V 100 µA 30 µA 5.5 V 4.5 V CMOS INDUSTRIAL NO NOR TYPE R-PQCC-J32 Not Qualified e0 85 °C -40 °C 32 PLASTIC/EPOXY QCCJ LDCC32,.5X.6 RECTANGULAR CHIP CARRIER YES TIN LEAD J BEND 1.27 mm QUAD 3.56 mm 13.97 mm 11.43 mm INTEL CORP QFJ 0.450 X 0.550 INCH, PLASTIC, LCC-32 32 unknown EAR99 8542.32.00.51
TN28F010-90
 Rochester Electronics LLC 		Check for Price No Active 1.0486 Mbit 8 128KX8 5 V 90 ns FLASH 100000 ERASE/PROGRAM CYCLES 1 128000 131.072 k ASYNCHRONOUS PARALLEL 12 V 5.5 V 4.5 V CMOS INDUSTRIAL NOR TYPE R-PQCC-J32 e0 85 °C -40 °C 32 PLASTIC/EPOXY QCCJ RECTANGULAR CHIP CARRIER YES TIN LEAD J BEND 1.27 mm QUAD 3.56 mm 13.97 mm 11.43 mm ROCHESTER ELECTRONICS LLC 0.450 X 0.550 INCH, PLASTIC, LCC-32 unknown EAR99 8542.32.00.51