Parametric results for: TPCA8011H under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

208.0 mJ 1

5 hits Apply

Configuration (2)

SINGLE 4 SINGLE WITH BUILT-IN DIODE 1

5 hits Apply

DS Breakdown Voltage-Min (1)

20 V 1

5 hits Apply

Drain Current-Max (ID) (1)

40 A 5

5 hits Apply

Drain-source On Resistance-Max (1)

7.5 mΩ 1

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

R-PDSO-F8 1

5 hits Apply

Manufacturer (1)

Toshiba America Electronic Components 5

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (1)

8 1

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

150.0 °C 5

5 hits Apply

PLASTIC/EPOXY 1

5 hits Apply

RECTANGULAR 1

5 hits Apply

SMALL OUTLINE 1

5 hits Apply

End Of Life 5

5 hits Apply

No 1

5 hits Apply

NOT SPECIFIED 1

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

45 W 5

5 hits Apply

Surface Mount (1)

YES 5

5 hits Apply