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UM4010AE3
Microsemi Corporation
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Check for Price | Transferred | 3 pF | 25 W | 500 mΩ | SILICON | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | LOW DISTORTION | ATTENUATOR; SWITCHING | HIGH FREQUENCY TO S BAND | 10 µs | O-XEMW-N2 | 2 | UNSPECIFIED | ROUND | MICROWAVE | NO LEAD | END | MICROSEMI CORP | compliant | EAR99 | 8541.10.00.80 | |||||||||||||||
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UM4010AE3
Microchip Technology Inc
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Check for Price | Active | 3 pF | 25 W | 500 mΩ | SILICON | 1 kV | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | LOW DISTORTION | ATTENUATOR; SWITCHING | HIGH FREQUENCY TO S BAND | 10 µs | O-XEMW-N2 | ISOLATED | 2 | UNSPECIFIED | ROUND | MICROWAVE | NO LEAD | END | MICROCHIP TECHNOLOGY INC | compliant | EAR99 | 8541.10.00.80 | |||||||||||||
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UM4010A
Microchip Technology Inc
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Check for Price | No | Active | 3 pF | 2.4 pF | 25 W | 500 mΩ | SILICON | 1 kV | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | LOW DISTORTION | ATTENUATOR; SWITCHING | 100 mA | 100 MHz | HIGH FREQUENCY TO S BAND | 10 µs | 100 V | Not Qualified | O-CEMW-N2 | e0 | 2 | CERAMIC, METAL-SEALED COFIRED | ROUND | MICROWAVE | TIN LEAD | NO LEAD | END | MICROCHIP TECHNOLOGY INC | compliant | EAR99 | 8541.10.00.60 | ||||||
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UM4010A
Microsemi Corporation
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Check for Price | No | No | Transferred | 3 pF | 3 pF | 25 W | 500 mΩ | SILICON | 1 kV | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | LOW DISTORTION | ATTENUATOR; SWITCHING | 100 mA | 100 MHz | HIGH FREQUENCY TO S BAND | 10 µs | 100 V | Not Qualified | O-XEMW-N2 | e0 | 175 °C | -65 °C | 2 | UNSPECIFIED | ROUND | MICROWAVE | TIN LEAD | NO LEAD | END | MICROSEMI CORP | unknown | EAR99 | 8541.10.00.80 |