Parametric results for: UMB1N under Small Signal Bipolar Transistors

All Filters Additional Feature Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

BUILT-IN BIAS RESISTOR RATIO IS 1 1 DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1 2 DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1.2 1

4 hits Apply

Collector Current-Max (IC) (2)

30 mA 2 100 mA 2

Min (A) - Max (A)

4 hits Apply

Collector-Emitter Voltage-Max (1)

50 V 4

4 hits Apply

Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR 4

4 hits Apply

DC Current Gain-Min (hFE) (1)

56.0 4

4 hits Apply

R-PDSO-G6 4

4 hits Apply

e2 4

4 hits Apply

Manufacturer (1)

ROHM Semiconductor 4

4 hits Apply

1 2

4 hits Apply

Number of Elements (1)

2 4

4 hits Apply

Number of Terminals (1)

6 4

4 hits Apply

150.0 °C 2

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

SMALL OUTLINE 4

4 hits Apply

Active 4

4 hits Apply

Yes 4

4 hits Apply

260 4

4 hits Apply

Polarity/Channel Type (1)

PNP 4

4 hits Apply

150 mW 1

4 hits Apply

Surface Mount (1)

YES 4

4 hits Apply

Transition Frequency-Nom (fT) (1)

250 MHz 1

4 hits Apply