Parametric results for: buz80a under Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

LEADFORM OPTIONS ARE AVAILABLE 1

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DRAIN 1

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Configuration (3)

SINGLE 3 Single 1 SINGLE WITH BUILT-IN DIODE 1

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DS Breakdown Voltage-Min (1)

800 V 2

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Drain Current-Max (Abs) (ID) (1)

3 A 1

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Drain Current-Max (ID) (2)

3 A 3 3.8 A 1

Min (A) - Max (A)

6 hits Apply

Drain-source On Resistance-Max (1)

3 Ω 1

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METAL-OXIDE SEMICONDUCTOR 5

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55 pF 1

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TO-220AB 1

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R-PSFM-T3 1

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e0 3

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Manufacturer (6)

Freescale Semiconductor 1 Motorola Semiconductor Products 1 New Jersey Semiconductor Products Inc 1 North American Philips Discrete Products Div 1 onsemi 1 Semiconductor Technology Inc 1

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Number of Elements (1)

1 4

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Number of Terminals (1)

3 1

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ENHANCEMENT MODE 5

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150.0 °C 4

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PLASTIC/EPOXY 1

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RECTANGULAR 1

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FLANGE MOUNT 1

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Contact Manufacturer 2 Obsolete 3 Transferred 1

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235 1

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Polarity/Channel Type (1)

N-CHANNEL 5

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75 W 1

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75 W 4

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Surface Mount (1)

NO 4

6 hits Apply