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BYV27-100-TR
Vishay Intertechnologies
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$0.2206 | Yes | Active | 2 A | 880 mV | 25 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 100 V | 1 | AVALANCHE | LOW LEAKAGE CURRENT | ULTRA FAST RECOVERY | 50 A | 1 | Not Qualified | E-LALF-W2 | e2 | DO-204AP | 1 | 175 °C | -55 °C | 260 | 30 | ISOLATED | 2 | GLASS | ELLIPTICAL | LONG FORM | Tin/Silver (Sn96.5Ag3.5) | WIRE | AXIAL | VISHAY INTERTECHNOLOGY INC | HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2 | compliant | Vishay | ||||||||
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BYV27-100-TR
Vishay Semiconductors
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$0.3619 | Yes | Yes | Active | 2 A | 880 mV | 25 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 100 V | 1 | AVALANCHE | LOW LEAKAGE CURRENT | ULTRA FAST RECOVERY | 50 A | 1 | Not Qualified | E-LALF-W2 | e2 | DO-204AP | 1 | 175 °C | -55 °C | 260 | 30 | ISOLATED | 2 | GLASS | ELLIPTICAL | LONG FORM | Tin/Silver (Sn96.5Ag3.5) | WIRE | AXIAL | VISHAY SEMICONDUCTORS | E-LALF-W2 | unknown | Vishay | DO-204 | 2 | EAR99 | 8541.10.00.80 | |||
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BYV27-100T/R
Philips Semiconductors
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Check for Price | No | Transferred | 1.3 A | 1 V | 25 ns | RECTIFIER DIODE | SINGLE | NO | 100 V | 1 | 50 A | 1 | e0 | 175 °C | Tin/Lead (Sn80Pb20) | PHILIPS SEMICONDUCTORS | unknown | EAR99 | |||||||||||||||||||||||||||
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BYV27-100T/R
NXP Semiconductors
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Check for Price | Obsolete | 1.3 A | 1.07 V | 25 ns | 1 µA | SILICON | RECTIFIER DIODE | SINGLE | NO | 100 V | 1 | AVALANCHE | GENERAL PURPOSE | 50 A | 1 | Not Qualified | E-LALF-W2 | 175 °C | ISOLATED | 2 | GLASS | ELLIPTICAL | LONG FORM | WIRE | AXIAL | NXP SEMICONDUCTORS | E-LALF-W2 | unknown | EAR99 | 8541.10.00.80 |