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Parametric results for: byv28200 under Rectifier Diodes

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Manufacturer Part Number: byv28200
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SBYV28-200-E3/54
 Vishay Intertechnologies 		$0.1925 Yes Active 3.5 A 1.1 V 20 ns SILICON RECTIFIER DIODE SINGLE NO 200 V 1 LOW LEAKAGE CURRENT, FREE WHEELING DIODE EFFICIENCY 90 A 1 Not Qualified O-PALF-W2 e3 DO-201AD 150 °C -55 °C ISOLATED 2 PLASTIC/EPOXY ROUND LONG FORM MATTE TIN WIRE AXIAL VISHAY INTERTECHNOLOGY INC ROHS COMPLIANT, PLASTIC PACKAGE-2 compliant Vishay
SBYV28-200-E3/73
 Vishay Intertechnologies 		$0.2457 Yes Active 3.5 A 1.1 V 20 ns SILICON RECTIFIER DIODE SINGLE NO 200 V 1 LOW LEAKAGE CURRENT, FREE WHEELING DIODE EFFICIENCY 90 A 1 Not Qualified O-PALF-W2 e3 DO-201AD 150 °C -55 °C ISOLATED 2 PLASTIC/EPOXY ROUND LONG FORM MATTE TIN WIRE AXIAL VISHAY INTERTECHNOLOGY INC ROHS COMPLIANT, PLASTIC PACKAGE-2 compliant Vishay
SBYV28-200-E3/73
 Vishay Semiconductors 		$0.3049 Yes Yes Active 3.5 A 1.1 V 20 ns SILICON RECTIFIER DIODE SINGLE NO 200 V 1 LOW LEAKAGE CURRENT, FREE WHEELING DIODE EFFICIENCY 90 A 1 Not Qualified O-PALF-W2 e3 DO-201AD 150 °C -55 °C ISOLATED 2 PLASTIC/EPOXY ROUND LONG FORM MATTE TIN WIRE AXIAL VISHAY SEMICONDUCTORS O-PALF-W2 unknown Vishay DO-201AD 2 EAR99 8541.10.00.80
SBYV28-200-E3/54
 Vishay Semiconductors 		$0.3180 Yes Yes Active 3.5 A 1.1 V 20 ns SILICON RECTIFIER DIODE SINGLE NO 200 V 1 LOW LEAKAGE CURRENT, FREE WHEELING DIODE EFFICIENCY 90 A 1 Not Qualified O-PALF-W2 e3 DO-201AD 150 °C -55 °C ISOLATED 2 PLASTIC/EPOXY ROUND LONG FORM MATTE TIN WIRE AXIAL VISHAY SEMICONDUCTORS O-PALF-W2 unknown Vishay DO-201AD 2 EAR99 8541.10.00.80
BYV28-200-TAP
 Vishay Intertechnologies 		$0.3749 Yes Active 3.5 A 890 mV 30 ns SILICON RECTIFIER DIODE SINGLE NO 200 V 1 AVALANCHE METALLURGICALLY BONDED ULTRA FAST RECOVERY 90 A 1 Not Qualified E-LALF-W2 e2 175 °C -55 °C 260 30 ISOLATED 2 GLASS ELLIPTICAL LONG FORM TIN SILVER WIRE AXIAL VISHAY INTERTECHNOLOGY INC HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2 compliant Vishay
BYV28-200-TR
 Vishay Semiconductors 		$0.7324 Yes Yes Active 3.5 A 890 mV 30 ns SILICON RECTIFIER DIODE SINGLE NO 200 V 1 AVALANCHE METALLURGICALLY BONDED ULTRA FAST RECOVERY 90 A 1 Not Qualified E-LALF-W2 e2 1 175 °C -55 °C 260 30 ISOLATED 2 GLASS ELLIPTICAL LONG FORM TIN SILVER WIRE AXIAL VISHAY SEMICONDUCTORS E-LALF-W2 unknown Vishay 2 EAR99 8541.10.00.80
BYV28-200-TAP
 Vishay Semiconductors 		$0.7324 Yes Yes Active 3.5 A 890 mV 30 ns SILICON RECTIFIER DIODE SINGLE NO 200 V 1 AVALANCHE METALLURGICALLY BONDED ULTRA FAST RECOVERY 90 A 1 Not Qualified E-LALF-W2 e2 175 °C -55 °C 260 30 ISOLATED 2 GLASS ELLIPTICAL LONG FORM TIN SILVER WIRE AXIAL VISHAY SEMICONDUCTORS E-LALF-W2 unknown Vishay 2 EAR99 8541.10.00.80
BYV28-200/30113
 NXP Semiconductors 		Check for Price Obsolete 3.5 A 1.02 V 25 ns 5 µA SILICON RECTIFIER DIODE SINGLE NO 200 V 1 AVALANCHE ULTRA FAST RECOVERY 90 A 1 Not Qualified O-LALF-W2 175 °C -65 °C ISOLATED 2 GLASS ROUND LONG FORM WIRE AXIAL NXP SEMICONDUCTORS O-LALF-W2 unknown EAR99 8541.10.00.80
BYV28-200/50113
 NXP Semiconductors 		Check for Price Obsolete 3.5 A 1.02 V 25 ns 5 µA SILICON RECTIFIER DIODE SINGLE NO 200 V 1 AVALANCHE ULTRA FAST RECOVERY 90 A 1 Not Qualified O-LALF-W2 175 °C -65 °C ISOLATED 2 GLASS ROUND LONG FORM WIRE AXIAL NXP SEMICONDUCTORS O-LALF-W2 unknown EAR99 8541.10.00.80
BYV28-200HR
 Digitron Semiconductors 		Check for Price No Active 3.5 A 1.1 V 30 ns 1 µA SILICON RECTIFIER DIODE SINGLE NO 200 V 1 HIGH RELIABILITY ULTRA FAST RECOVERY 90 A 1 O-XALF-W2 MIL-19500 175 °C -65 °C NOT SPECIFIED NOT SPECIFIED ISOLATED 2 UNSPECIFIED ROUND LONG FORM WIRE AXIAL DIGITRON SEMICONDUCTORS unknown EAR99
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