Parametric results for: fdg6308p under Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (2)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 6 SINGLE 1

7 hits Apply

DS Breakdown Voltage-Min (1)

20 V 6

7 hits Apply

Drain Current-Max (ID) (1)

600 mA 7

7 hits Apply

Drain-source On Resistance-Max (1)

400 mΩ 6

7 hits Apply

METAL-OXIDE SEMICONDUCTOR 7

7 hits Apply

R-PDSO-G6 6

7 hits Apply

e3 4

7 hits Apply

Manufacturer (3)

Fairchild Semiconductor Corporation 4 onsemi 2 Rochester Electronics LLC 1

7 hits Apply

1 4

7 hits Apply

Number of Elements (2)

1 1 2 6

Min - Max

7 hits Apply

Number of Terminals (1)

6 6

7 hits Apply

ENHANCEMENT MODE 7

7 hits Apply

150.0 °C 6

7 hits Apply

PLASTIC/EPOXY 6

7 hits Apply

RECTANGULAR 6

7 hits Apply

SMALL OUTLINE 6

7 hits Apply

Active 2 End Of Life 1 Obsolete 2 Transferred 2

7 hits Apply

Yes 3

7 hits Apply

260 3

7 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 7

7 hits Apply

300 mW 4

7 hits Apply

Surface Mount (1)

YES 7

7 hits Apply