Parametric results for: ftd232r under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (4)

COMMON DRAIN, 2 ELEMENTS 2 COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE 7 COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR 1 SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 13

39 hits Apply

DS Breakdown Voltage-Min (4)

20 V 13 30 V 8 60 V 1 100 V 1

Min (V) - Max (V)

39 hits Apply

Drain Current-Max (ID) (9)

800 mA 1 1 A 1 1.5 A 1 2.2 A 1 3 A 3 4 A 8 4.5 A 3 5 A 3 6 A 12

Min (A) - Max (A)

39 hits Apply

Drain-source On Resistance-Max (15)

23 mΩ 1 24 mΩ 6 25 mΩ 1 26 mΩ 2 28 mΩ 1 34 mΩ 2 35 mΩ 1 39 mΩ 2 42 mΩ 1 49 mΩ 1 73 mΩ 1 130 mΩ 1 260 mΩ 1 440 mΩ 1 1 Ω 1

Min (Ω) - Max (Ω)

39 hits Apply

METAL-OXIDE SEMICONDUCTOR 33

39 hits Apply

R-PDSO-G8 23

39 hits Apply

Manufacturer (4)

Altech Corporation 6 onsemi 7 SANYO Electric Co Ltd 22 SANYO Semiconductor Co Ltd 4

39 hits Apply

Number of Elements (1)

2 23

39 hits Apply

Number of Terminals (1)

8 23

39 hits Apply

ENHANCEMENT MODE 33

39 hits Apply

150.0 °C 24

39 hits Apply

PLASTIC/EPOXY 23

39 hits Apply

RECTANGULAR 23

39 hits Apply

SMALL OUTLINE 23

39 hits Apply

Active 7 Obsolete 27 Transferred 5

39 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 33

39 hits Apply

800 mW 10 1 W 3 1.25 W 2 1.3 W 8 1.4 W 6

Min (W) - Max (W)

39 hits Apply

Surface Mount (1)

YES 33

39 hits Apply