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IDT72V2113L10PFGI8
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Transferred | 4.7186 Mbit | 18 | 256KX18 | 3.3 V | 6.5 ns | 10 ns | ALTERNATIVE MEMORY WIDTH 9; ASYNCHRONOUS MODE ALSO POSSIBLE | 1 | 256000 | 262.144 k | SYNCHRONOUS | YES | PARALLEL | 3.45 V | 3.15 V | CMOS | INDUSTRIAL | S-PQFP-G80 | Not Qualified | e3 | 3 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 80 | PLASTIC/EPOXY | LQFP | SQUARE | FLATPACK, LOW PROFILE | YES | Matte Tin (Sn) | GULL WING | 650 µm | QUAD | 1.6 mm | 14 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | QFP | LQFP, | 80 | compliant | EAR99 | 8542.32.00.71 | ||||||||
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IDT72V2113L10PFI9
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 4.7186 Mbit | 18 | 256KX18 | 3.3 V | 6.5 ns | 10 ns | ALTERNATIVE MEMORY WIDTH 9; ASYNCHRONOUS MODE ALSO POSSIBLE | 1 | 256000 | 262.144 k | SYNCHRONOUS | YES | PARALLEL | 3.45 V | 3.15 V | CMOS | INDUSTRIAL | S-PQFP-G80 | Not Qualified | e0 | 3 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 80 | PLASTIC/EPOXY | LQFP | SQUARE | FLATPACK, LOW PROFILE | YES | Tin/Lead (Sn/Pb) | GULL WING | 650 µm | QUAD | 1.6 mm | 14 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | QFP | PLASTIC, TQFP-80 | 80 | compliant | EAR99 | 8542.32.00.71 | ||||||||
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IDT72V2113L10PFI8
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 4.7186 Mbit | 18 | 256KX18 | 3.3 V | 6.5 ns | 100 MHz | 10 ns | OTHER FIFO | ALTERNATIVE MEMORY WIDTH 9; ASYNCHRONOUS MODE ALSO POSSIBLE | 9 | 1 | 256000 | 262.144 k | SYNCHRONOUS | YES | PARALLEL | 15 mA | 35 µA | 3.45 V | 3.15 V | CMOS | INDUSTRIAL | S-PQFP-G80 | Not Qualified | e0 | 3 | 85 °C | -40 °C | 240 | 20 | 80 | PLASTIC/EPOXY | LQFP | QFP80,.64SQ | SQUARE | FLATPACK, LOW PROFILE | YES | Tin/Lead (Sn85Pb15) | GULL WING | 650 µm | QUAD | 1.6 mm | 14 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | QFP | PLASTIC, TQFP-80 | 80 | not_compliant | EAR99 | 8542.32.00.71 | ||
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IDT72V2113L10PFGI
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Transferred | 4.7186 Mbit | 18 | 256KX18 | 3.3 V | 6.5 ns | 100 MHz | 10 ns | OTHER FIFO | ALTERNATIVE MEMORY WIDTH 9; ASYNCHRONOUS MODE ALSO POSSIBLE | 9 | 1 | 256000 | 262.144 k | SYNCHRONOUS | YES | PARALLEL | 15 mA | 35 µA | 3.45 V | 3.15 V | CMOS | INDUSTRIAL | S-PQFP-G80 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 30 | 80 | PLASTIC/EPOXY | LQFP | QFP80,.64SQ | SQUARE | FLATPACK, LOW PROFILE | YES | Matte Tin (Sn) - annealed | GULL WING | 650 µm | QUAD | 1.6 mm | 14 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | QFP | LQFP, QFP80,.64SQ | 80 | compliant | EAR99 | 8542.32.00.71 | ||
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IDT72V2113L10PF
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 4.7186 Mbit | 18 | 256KX18 | 3.3 V | 6.5 ns | 100 MHz | 10 ns | OTHER FIFO | ALTERNATIVE MEMORY WIDTH 9; ASYNCHRONOUS MODE ALSO POSSIBLE | 9 | 1 | 256000 | 262.144 k | SYNCHRONOUS | YES | PARALLEL | 15 mA | 35 µA | 3.45 V | 3.15 V | CMOS | COMMERCIAL | S-PQFP-G80 | Not Qualified | e0 | 3 | 70 °C | 240 | 20 | 80 | PLASTIC/EPOXY | LQFP | QFP80,.64SQ | SQUARE | FLATPACK, LOW PROFILE | YES | Tin/Lead (Sn85Pb15) | GULL WING | 650 µm | QUAD | 1.6 mm | 14 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | QFP | PLASTIC, TQFP-80 | 80 | not_compliant | EAR99 | 8542.32.00.71 | |||
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IDT72V2113L10PF9
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 4.7186 Mbit | 18 | 256KX18 | 3.3 V | 6.5 ns | 10 ns | ALTERNATIVE MEMORY WIDTH 9; ASYNCHRONOUS MODE ALSO POSSIBLE | 1 | 256000 | 262.144 k | SYNCHRONOUS | YES | PARALLEL | 3.45 V | 3.15 V | CMOS | COMMERCIAL | S-PQFP-G80 | Not Qualified | e0 | 3 | 70 °C | NOT SPECIFIED | NOT SPECIFIED | 80 | PLASTIC/EPOXY | LQFP | SQUARE | FLATPACK, LOW PROFILE | YES | Tin/Lead (Sn/Pb) | GULL WING | 650 µm | QUAD | 1.6 mm | 14 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | QFP | PLASTIC, TQFP-80 | 80 | compliant | EAR99 | 8542.32.00.71 | |||||||||
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IDT72V2113L10PF8
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 4.7186 Mbit | 18 | 256KX18 | 3.3 V | 6.5 ns | 100 MHz | 10 ns | OTHER FIFO | ALTERNATIVE MEMORY WIDTH 9; ASYNCHRONOUS MODE ALSO POSSIBLE | 9 | 1 | 256000 | 262.144 k | SYNCHRONOUS | YES | PARALLEL | 15 mA | 35 µA | 3.45 V | 3.15 V | CMOS | COMMERCIAL | S-PQFP-G80 | Not Qualified | e0 | 3 | 70 °C | 240 | 20 | 80 | PLASTIC/EPOXY | LQFP | QFP80,.64SQ | SQUARE | FLATPACK, LOW PROFILE | YES | Tin/Lead (Sn85Pb15) | GULL WING | 650 µm | QUAD | 1.6 mm | 14 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | QFP | PLASTIC, TQFP-80 | 80 | not_compliant | EAR99 | 8542.32.00.71 | |||
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IDT72V2113L10PFI
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 4.7186 Mbit | 18 | 256KX18 | 3.3 V | 6.5 ns | 100 MHz | 10 ns | OTHER FIFO | ALTERNATIVE MEMORY WIDTH 9; ASYNCHRONOUS MODE ALSO POSSIBLE | 9 | 1 | 256000 | 262.144 k | SYNCHRONOUS | YES | PARALLEL | 15 mA | 35 µA | 3.45 V | 3.15 V | CMOS | INDUSTRIAL | S-PQFP-G80 | Not Qualified | e0 | 3 | 85 °C | -40 °C | 240 | 20 | 80 | PLASTIC/EPOXY | LQFP | QFP80,.64SQ | SQUARE | FLATPACK, LOW PROFILE | YES | Tin/Lead (Sn85Pb15) | GULL WING | 650 µm | QUAD | 1.6 mm | 14 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | QFP | PLASTIC, TQFP-80 | 80 | not_compliant | EAR99 | 8542.32.00.71 | ||
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IDT72V2113L10PFG
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Transferred | 4.7186 Mbit | 18 | 256KX18 | 3.3 V | 6.5 ns | 100 MHz | 10 ns | OTHER FIFO | ALTERNATIVE MEMORY WIDTH 9; ASYNCHRONOUS MODE ALSO POSSIBLE | 9 | 1 | 256000 | 262.144 k | SYNCHRONOUS | YES | PARALLEL | 15 mA | 35 µA | 3.45 V | 3.15 V | CMOS | COMMERCIAL | S-PQFP-G80 | Not Qualified | e3 | 3 | 70 °C | 260 | 30 | 80 | PLASTIC/EPOXY | LQFP | QFP80,.64SQ | SQUARE | FLATPACK, LOW PROFILE | YES | Matte Tin (Sn) - annealed | GULL WING | 650 µm | QUAD | 1.6 mm | 14 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | QFP | LQFP, QFP80,.64SQ | 80 | compliant | EAR99 | 8542.32.00.71 |