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1 - 10 of 48 results
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IPD80R1K0CEATMA1
Infineon Technologies AG
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$0.3083 | Yes | Not Recommended | e3 | 1 | NOT SPECIFIED | NOT SPECIFIED | Tin (Sn) | INFINEON TECHNOLOGIES AG | not_compliant | EAR99 | Infineon | |||||||||||||||||||||||||||||
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IPD80R2K4P7ATMA1
Infineon Technologies AG
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$0.4623 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 800 V | 1 | 2.4 Ω | 4 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 5.3 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | 1 | -55 °C | 260 | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | compliant | EAR99 | Infineon | SMALL OUTLINE, R-PSSO-G2 | ||||||
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IPD80R3K3P7ATMA1
Infineon Technologies AG
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$0.4669 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 800 V | 1 | 3.3 Ω | 2 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 3.8 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | 1 | -55 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | not_compliant | EAR99 | Infineon | TO-252, DPAK-3/2 | ||||||
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IPD80R4K5P7ATMA1
Infineon Technologies AG
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$0.4976 | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 800 V | 1 | 4.5 Ω | 1 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 2.6 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | 1 | -55 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | not_compliant | EAR99 | Infineon | SMALL OUTLINE, R-PSSO-G2 | |||||
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IPD80R2K8CEBTMA1
Infineon Technologies AG
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$0.5144 | Yes | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 800 V | 1 | 1.9 A | 2.8 Ω | 90 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 6 A | SWITCHING | SILICON | TO-252 | R-PSSO-G2 | 1 | -55 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | compliant | EAR99 | SMALL OUTLINE, R-PSSO-G2 | ||||||||||
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IPD80R2K0P7ATMA1
Infineon Technologies AG
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$0.6364 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 800 V | 1 | 2 Ω | 6 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 6 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | 1 | -55 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | compliant | EAR99 | Infineon | SMALL OUTLINE, R-PSSO-G2 | ||||||
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IPD80R1K4CEBTMA1
Infineon Technologies AG
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$0.6814 | Yes | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 800 V | 1 | 3.9 A | 1.4 Ω | 170 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 12 A | SWITCHING | SILICON | TO-252 | R-PSSO-G2 | e3 | 1 | -55 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | not_compliant | EAR99 | SMALL OUTLINE, R-PSSO-G2 | ||||||||
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IPD80R2K7C3AATMA1
Infineon Technologies AG
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$0.6846 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 800 V | 1 | 2 A | 2.7 Ω | 90 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 6 A | SWITCHING | SILICON | TO-252 | R-PSSO-G2 | e3 | AEC-Q101 | 1 | -40 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | not_compliant | EAR99 | Infineon | SMALL OUTLINE, R-PSSO-G2 | ||||
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IPD80R1K2P7ATMA1
Infineon Technologies AG
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$0.7105 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 800 V | 1 | 1.2 Ω | 10 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 11 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | 1 | -55 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | not_compliant | EAR99 | Infineon | SMALL OUTLINE, R-PSSO-G2 | ||||||
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IPD80R1K4P7ATMA1
Infineon Technologies AG
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$0.7179 | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 800 V | 1 | 1.4 Ω | 8 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 8.9 A | SWITCHING | SILICON | TO-252 | R-PSSO-G2 | e3 | 1 | -55 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | not_compliant | EAR99 | Infineon | SMALL OUTLINE, R-PSSO-G2 | 2018-02-09 |