Parametric results for: ipw65r190cfd under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

HIGH RELIABILITY 2

6 hits Apply

484.0 mJ 5

6 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 5

6 hits Apply

DS Breakdown Voltage-Min (1)

650 V 5

6 hits Apply

Drain Current-Max (ID) (1)

17.5 A 5

6 hits Apply

Drain-source On Resistance-Max (1)

190 mΩ 5

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

6 hits Apply

TO-247 5

6 hits Apply

R-PSFM-T3 5

6 hits Apply

e3 5

6 hits Apply

Manufacturer (1)

Infineon Technologies AG 6

6 hits Apply

Number of Elements (1)

1 5

6 hits Apply

Number of Terminals (1)

3 5

6 hits Apply

ENHANCEMENT MODE 5

6 hits Apply

150.0 °C 4

6 hits Apply

-55.0 °C 3

6 hits Apply

PLASTIC/EPOXY 5

6 hits Apply

RECTANGULAR 5

6 hits Apply

FLANGE MOUNT 5

6 hits Apply

Active 3 Obsolete 3

6 hits Apply

Yes 4

6 hits Apply

NOT SPECIFIED 4

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

6 hits Apply

151 W 4

6 hits Apply

Surface Mount (1)

NO 5

6 hits Apply