Parametric results for: irfs31n20d under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

420.0 mJ 12

15 hits Apply

DRAIN 12

15 hits Apply

Configuration (2)

SINGLE 6 SINGLE WITH BUILT-IN DIODE 9

15 hits Apply

DS Breakdown Voltage-Min (1)

200 V 12

15 hits Apply

Drain Current-Max (ID) (1)

31 A 15

15 hits Apply

Drain-source On Resistance-Max (1)

82 mΩ 12

15 hits Apply

METAL-OXIDE SEMICONDUCTOR 15

15 hits Apply

R-PSSO-G2 12

15 hits Apply

e0 2 e3 9

15 hits Apply

Manufacturer (2)

Infineon Technologies AG 6 International Rectifier 9

15 hits Apply

1 13

15 hits Apply

Number of Elements (1)

1 15

15 hits Apply

Number of Terminals (1)

2 12

15 hits Apply

ENHANCEMENT MODE 15

15 hits Apply

175.0 °C 8

15 hits Apply

-55.0 °C 1

15 hits Apply

PLASTIC/EPOXY 12

15 hits Apply

RECTANGULAR 12

15 hits Apply

SMALL OUTLINE 12

15 hits Apply

Obsolete 9 Transferred 6

15 hits Apply

No 2 Yes 3

15 hits Apply

225 1 260 10 NOT SPECIFIED 2

15 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 15

15 hits Apply

200 W 6

15 hits Apply

Surface Mount (1)

YES 15

15 hits Apply