Parametric results for: ixta20n65x under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 1

6 hits Apply

400.0 mJ 1

6 hits Apply

DRAIN 5

6 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 5

6 hits Apply

DS Breakdown Voltage-Min (1)

650 V 5

6 hits Apply

Drain Current-Max (ID) (1)

20 A 5

6 hits Apply

Drain-source On Resistance-Max (2)

185 mΩ 1 210 mΩ 4

Min (Ω) - Max (Ω)

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

6 hits Apply

1.4 pF 1 22 pF 4

Min (pF) - Max (pF)

6 hits Apply

TO-263AB 5

6 hits Apply

R-PSSO-G2 5

6 hits Apply

e3 5

6 hits Apply

Manufacturer (2)

IXYS Corporation 3 Littelfuse Inc 3

6 hits Apply

1 5

6 hits Apply

Number of Elements (1)

1 5

6 hits Apply

Number of Terminals (1)

2 5

6 hits Apply

ENHANCEMENT MODE 5

6 hits Apply

150.0 °C 5

6 hits Apply

-55.0 °C 5

6 hits Apply

PLASTIC/EPOXY 5

6 hits Apply

RECTANGULAR 5

6 hits Apply

SMALL OUTLINE 5

6 hits Apply

Active 1 Obsolete 2 Transferred 3

6 hits Apply

260 6

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

6 hits Apply

290 W 1 320 W 4

Min (W) - Max (W)

6 hits Apply

Surface Mount (1)

YES 5

6 hits Apply