Parametric results for: jans1n5616 under Rectifier Diodes
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JANS1N5616
Microchip Technology Inc
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$44.3531 | No | Active | 1 A | 2 µs | SILICON | RECTIFIER DIODE | SINGLE | NO | 400 V | 1 | AVALANCHE | HIGH RELIABILITY | 1 | Qualified | O-LALF-W2 | e0 | MIL-19500 | 200 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, A PACKAGE-2 | compliant | |||||||||||||||
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JANS1N5616/TR
Microchip Technology Inc
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$44.5171 | No | Active | 1 A | 1.3 V | 2 µs | 500 nA | SILICON | 440 V | RECTIFIER DIODE | SINGLE | NO | 400 V | 1 | HIGH RELIABILITY | GENERAL PURPOSE | 30 A | 1 | 400 V | O-LALF-W2 | MIL-19500 | 200 °C | -65 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | compliant | ||||||||||||
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JANS1N5616US
Microchip Technology Inc
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$51.4901 | No | Active | 1 A | 2 µs | SILICON | RECTIFIER DIODE | SINGLE | YES | 1 | METALLURGICALLY BONDED | 1 | Qualified | O-LELF-R2 | e0 | MIL-19500/427K | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS PACKAGE-2 | compliant | |||||||||||||||||||
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JANS1N5616US
Microsemi Corporation
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Check for Price | No | No | Transferred | 1 A | 2 µs | SILICON | RECTIFIER DIODE | SINGLE | YES | 1 | METALLURGICALLY BONDED | 1 | Not Qualified | O-LELF-R2 | e0 | MIL-19500/427K | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROSEMI CORP | HERMETIC SEALED, GLASS PACKAGE-2 | unknown | 2 | EAR99 | 8541.10.00.80 | |||||||||||||||
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JANS1N5616
Semtech Corporation
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Check for Price | Transferred | 1 A | 1.2 V | 2 µs | SILICON | RECTIFIER DIODE | SINGLE | NO | 400 V | 1 | METALLURGICALLY BONDED | 50 A | 1 | Qualified | O-XALF-W2 | MIL-19500 | 200 °C | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | WIRE | AXIAL | SEMTECH CORP | HERMETIC SEALED PACKAGE-2 | unknown | 2 | EAR99 | 8541.10.00.80 | |||||||||||||||
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JANS1N5616
Defense Logistics Agency
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Check for Price | Active | 1 A | 2 µs | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | METALLURGICALLY BONDED | 1 | Qualified | O-LALF-W2 | MIL-19500/427 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | DEFENSE LOGISTICS AGENCY | unknown | |||||||||||||||||||||||
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JANS1N5616
Micross Components
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Check for Price | Active | 2 A | 1.5 V | 2 µs | 500 nA | SILICON | 440 V | RECTIFIER DIODE | SINGLE | NO | 400 V | 1 | HIGH RELIABILITY | GENERAL PURPOSE | 30 A | 1 | 400 V | Qualified | E-XALF-W2 | MIL-PRF-19500 | 175 °C | -65 °C | ISOLATED | 2 | UNSPECIFIED | ELLIPTICAL | LONG FORM | WIRE | AXIAL | MICROSS COMPONENTS | unknown | ||||||||||||||
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JANS1N5616/TR
Microsemi Corporation
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Check for Price | No | Transferred | RECTIFIER DIODE | NOT SPECIFIED | NOT SPECIFIED | MICROSEMI CORP | compliant | EAR99 | |||||||||||||||||||||||||||||||||||||
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JANS1N5616US
Sensitron Semiconductors
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Check for Price | No | No | Active | 1 A | 1.3 V | 2 µs | SILICON | RECTIFIER DIODE | SINGLE | YES | 400 V | 1 | HIGH RELIABILITY, METALLURGICALLY BONDED | 1 | Qualified | E-LELF-R2 | MIL-19500 | 175 °C | -65 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | GLASS | ELLIPTICAL | LONG FORM | WRAP AROUND | END | SENSITRON SEMICONDUCTOR | HERMETIC SEALED, GLASS, MELF-A, 2 PIN | compliant | 2 | EAR99 | 8541.10.00.80 | MELF | ||||||||||
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JANS1N5616US
Defense Logistics Agency
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Check for Price | Active | 1 A | 2 µs | SILICON | RECTIFIER DIODE | SINGLE | YES | 1 | METALLURGICALLY BONDED | 1 | Qualified | O-LELF-R2 | MIL-19500/427K | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | DEFENSE LOGISTICS AGENCY | HERMETIC SEALED, GLASS PACKAGE-2 | unknown |