Parametric results for: jansr2n7424 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

HIGH RELIABILITY 2 HIGH RELIABILITY, RADIATION HARDENED 1 RADIATION HARDENED 1

6 hits Apply

500.0 mJ 4

6 hits Apply

DRAIN 2 ISOLATED 2

6 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 3

6 hits Apply

DS Breakdown Voltage-Min (1)

60 V 4

6 hits Apply

Drain Current-Max (ID) (2)

35 A 2 48 A 3

Min (A) - Max (A)

6 hits Apply

Drain-source On Resistance-Max (2)

48 mΩ 2 53 mΩ 2

Min (Ω) - Max (Ω)

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

6 hits Apply

TO-254AA 1

6 hits Apply

R-CBCC-N3 2 R-MSFM-P3 1 S-XSFM-P3 1

6 hits Apply

e0 4

6 hits Apply

Manufacturer (2)

Infineon Technologies AG 2 International Rectifier 4

6 hits Apply

Number of Elements (1)

1 5

6 hits Apply

Number of Terminals (1)

3 4

6 hits Apply

ENHANCEMENT MODE 4

6 hits Apply

150.0 °C 3

6 hits Apply

CERAMIC, METAL-SEALED COFIRED 2 METAL 1 UNSPECIFIED 1

6 hits Apply

RECTANGULAR 3 SQUARE 1

6 hits Apply

CHIP CARRIER 2 FLANGE MOUNT 2

6 hits Apply

Active 2 Obsolete 3 Transferred 1

6 hits Apply

No 2

6 hits Apply

NOT SPECIFIED 2

6 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 5

6 hits Apply

300 W 1

6 hits Apply

Surface Mount (2)

NO 2 YES 3

6 hits Apply