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1 - 10 of 36 results
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KM2365P-25
Samsung Semiconductor
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Check for Price | No | No | Obsolete | 65.536 kbit | 8 | 8KX8 | 5 V | 250 ns | MASK ROM | 1 | 8000 | 8.192 k | ASYNCHRONOUS | PARALLEL | 60 µA | MOS | COMMERCIAL | R-PDIP-T28 | Not Qualified | e0 | 3 | 70 °C | 28 | PLASTIC/EPOXY | DIP | DIP28,.6 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | SAMSUNG SEMICONDUCTOR INC | DIP, DIP28,.6 | unknown | EAR99 | 8542.32.00.71 | |||||
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M2365B1
STMicroelectronics
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Check for Price | No | Obsolete | 65.536 kbit | 8 | 8KX8 | 5 V | 250 ns | MASK ROM | 1 | 8000 | 8.192 k | ASYNCHRONOUS | PARALLEL | 70 µA | MOS | COMMERCIAL | R-PDIP-T28 | Not Qualified | e0 | 70 °C | 28 | PLASTIC/EPOXY | DIP | DIP28,.6 | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn/Pb) | THROUGH-HOLE | 2.54 mm | DUAL | STMICROELECTRONICS | not_compliant | EAR99 | 8542.32.00.71 | ||||||||
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KM2365SJI-20
Samsung Semiconductor
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Check for Price | No | No | Obsolete | 65.536 kbit | 8 | 8KX8 | 5 V | 200 ns | MASK ROM | 1 | 8000 | 8.192 k | ASYNCHRONOUS | PARALLEL | 60 µA | MOS | INDUSTRIAL | S-PQCC-J28 | Not Qualified | e0 | 3 | 85 °C | -40 °C | 28 | PLASTIC/EPOXY | QCCJ | LDCC28,.5SQ | SQUARE | CHIP CARRIER | YES | TIN LEAD | J BEND | 1.27 mm | QUAD | SAMSUNG SEMICONDUCTOR INC | QCCJ, LDCC28,.5SQ | unknown | EAR99 | 8542.32.00.71 | ||||
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KM2365JI-20
Samsung Semiconductor
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Check for Price | No | No | Obsolete | 65.536 kbit | 8 | 8KX8 | 5 V | 200 ns | MASK ROM | 1 | 8000 | 8.192 k | ASYNCHRONOUS | PARALLEL | 60 µA | MOS | INDUSTRIAL | S-PQCC-J28 | Not Qualified | e0 | 3 | 85 °C | -40 °C | 28 | PLASTIC/EPOXY | QCCJ | LDCC28,.5SQ | SQUARE | CHIP CARRIER | YES | TIN LEAD | J BEND | 1.27 mm | QUAD | SAMSUNG SEMICONDUCTOR INC | QCCJ, LDCC28,.5SQ | unknown | EAR99 | 8542.32.00.71 | ||||
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KM2365JI-30
Samsung Semiconductor
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Check for Price | No | No | Obsolete | 65.536 kbit | 8 | 8KX8 | 5 V | 300 ns | MASK ROM | 1 | 8000 | 8.192 k | ASYNCHRONOUS | PARALLEL | 60 µA | MOS | INDUSTRIAL | S-PQCC-J28 | Not Qualified | e0 | 3 | 85 °C | -40 °C | 28 | PLASTIC/EPOXY | QCCJ | LDCC28,.5SQ | SQUARE | CHIP CARRIER | YES | TIN LEAD | J BEND | 1.27 mm | QUAD | SAMSUNG SEMICONDUCTOR INC | QCCJ, LDCC28,.5SQ | unknown | EAR99 | 8542.32.00.71 | ||||
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SMM2365H
Epson Electronics America Inc
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Check for Price | No | Obsolete | 32.768 kbit | 8 | 4KX8 | 5 V | 300 ns | MASK ROM | 1 | 8000 | 8.192 k | ASYNCHRONOUS | PARALLEL | 30 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-XDIP-T28 | Not Qualified | e0 | 70 °C | -10 °C | 28 | CERAMIC | DIP | DIP28,.6 | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn/Pb) | THROUGH-HOLE | 2.54 mm | DUAL | SEIKO EPSON CORP | DIP, DIP28,.6 | unknown | EAR99 | 8542.32.00.71 | ||||
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SMM2365H
Seiko Epson Corporation
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Check for Price | No | Obsolete | 32.768 kbit | 8 | 4KX8 | 5 V | 300 ns | MASK ROM | 1 | 8000 | 8.192 k | ASYNCHRONOUS | PARALLEL | 30 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-XDIP-T28 | Not Qualified | e0 | 70 °C | -10 °C | 28 | CERAMIC | DIP | DIP28,.6 | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn/Pb) | THROUGH-HOLE | 2.54 mm | DUAL | SEIKO EPSON CORP | DIP, DIP28,.6 | unknown | EAR99 | 8542.32.00.71 | ||||
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KM2365P-20
Samsung Semiconductor
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Check for Price | No | No | Obsolete | 65.536 kbit | 8 | 8KX8 | 5 V | 200 ns | MASK ROM | 1 | 8000 | 8.192 k | ASYNCHRONOUS | PARALLEL | 60 µA | MOS | COMMERCIAL | R-PDIP-T28 | Not Qualified | e0 | 3 | 70 °C | 28 | PLASTIC/EPOXY | DIP | DIP28,.6 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | SAMSUNG SEMICONDUCTOR INC | DIP, DIP28,.6 | unknown | EAR99 | 8542.32.00.71 | |||||
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KM2365SJI-25
Samsung Semiconductor
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Check for Price | No | No | Obsolete | 65.536 kbit | 8 | 8KX8 | 5 V | 250 ns | MASK ROM | 1 | 8000 | 8.192 k | ASYNCHRONOUS | PARALLEL | 60 µA | MOS | INDUSTRIAL | S-PQCC-J28 | Not Qualified | e0 | 3 | 85 °C | -40 °C | 28 | PLASTIC/EPOXY | QCCJ | LDCC28,.5SQ | SQUARE | CHIP CARRIER | YES | TIN LEAD | J BEND | 1.27 mm | QUAD | SAMSUNG SEMICONDUCTOR INC | QCCJ, LDCC28,.5SQ | unknown | EAR99 | 8542.32.00.71 | ||||
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KM2365SP-25
Samsung Semiconductor
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Check for Price | No | No | Obsolete | 65.536 kbit | 8 | 8KX8 | 5 V | 250 ns | MASK ROM | 1 | 8000 | 8.192 k | ASYNCHRONOUS | PARALLEL | 60 µA | MOS | COMMERCIAL | R-PDIP-T28 | Not Qualified | e0 | 3 | 70 °C | 28 | PLASTIC/EPOXY | DIP | DIP28,.6 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | SAMSUNG SEMICONDUCTOR INC | DIP, DIP28,.6 | unknown | EAR99 | 8542.32.00.71 |