Parametric results for: mmbf0201nlt1 under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (2)

Single 1 SINGLE WITH BUILT-IN DIODE 1

2 hits Apply

DS Breakdown Voltage-Min (1)

20 V 1

2 hits Apply

Drain Current-Max (Abs) (ID) (1)

300 mA 1

2 hits Apply

Drain Current-Max (ID) (1)

300 mA 1

2 hits Apply

Drain-source On Resistance-Max (1)

1 Ω 1

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

TO-236AB 1

2 hits Apply

R-PDSO-G3 1

2 hits Apply

e0 1

2 hits Apply

Manufacturer (2)

Freescale Semiconductor 1 Motorola Semiconductor Products 1

2 hits Apply

Number of Elements (1)

1 1

2 hits Apply

Number of Terminals (1)

3 1

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

150.0 °C 2

2 hits Apply

PLASTIC/EPOXY 1

2 hits Apply

RECTANGULAR 1

2 hits Apply

SMALL OUTLINE 1

2 hits Apply

Obsolete 1 Transferred 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

225 mW 2

2 hits Apply

Surface Mount (1)

YES 2

2 hits Apply