Parametric results for: mmdf3n02hdr2 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 2 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE 3

6 hits Apply

405.0 mJ 5

6 hits Apply

Configuration (2)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 3 SINGLE WITH BUILT-IN DIODE 2

6 hits Apply

DS Breakdown Voltage-Min (1)

20 V 5

6 hits Apply

Drain Current-Max (Abs) (ID) (1)

3.8 A 1

6 hits Apply

Drain Current-Max (ID) (1)

3.8 A 5

6 hits Apply

Drain-source On Resistance-Max (1)

90 mΩ 5

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

R-PDSO-G8 5

6 hits Apply

e0 4 e3 1

6 hits Apply

Manufacturer (5)

Freescale Semiconductor 1 Motorola Mobility LLC 1 Motorola Semiconductor Products 1 onsemi 2 Rochester Electronics LLC 1

6 hits Apply

1 2 NOT SPECIFIED 1

6 hits Apply

Number of Elements (2)

1 2 2 3

Min - Max

6 hits Apply

Number of Terminals (1)

8 5

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

150.0 °C 3

6 hits Apply

PLASTIC/EPOXY 5

6 hits Apply

RECTANGULAR 5

6 hits Apply

SMALL OUTLINE 5

6 hits Apply

Active 1 Obsolete 3 Transferred 2

6 hits Apply

No 2 Yes 1

6 hits Apply

235 1 240 1 260 1

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

2 W 3

6 hits Apply

Surface Mount (1)

YES 6

6 hits Apply