Parametric results for: s29gl512s11tfav10 under Flash Memories

All Filters Access Time-Max Additional Feature Alternate Memory Width Boot Block Command User Interface Common Flash Interface Data Polling Data Retention Time-Min Endurance JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Sectors/Size Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Page Size Sector Size Supply Voltage-Nom (Vsup) Access Time-Max (1)

110 ns 2

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20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES 1

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1 1

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BOTTOM/TOP 2

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YES 1

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YES 1

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YES 1

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2 1

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100000.0 Write/Erase Cycles 1

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R-PDSO-G56 2

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e3 2

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18.4 mm 2

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Manufacturer (2)

Cypress Semiconductor 1 Infineon Technologies AG 1

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Memory Density (1)

536.8709 Mbit 2

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FLASH 2

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Memory Width (1)

8 2

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3 1

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1.0 2

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512 1

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56 2

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67.1089 M 2

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6.4E7 2

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ASYNCHRONOUS 2

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85.0 °C 2

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-40.0 °C 2

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Organization (1)

64MX8 2

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3-STATE 1

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PLASTIC/EPOXY 2

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TSSOP 2

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TSSOP56,.8,20 1

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RECTANGULAR 2

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SMALL OUTLINE, THIN PROFILE, SHRINK PITCH 2

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32 words 1

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Sector Size (1)

128K 1

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Supply Voltage-Nom (Vsup) (1)

3 V 2

2 hits Apply