Parametric results for: si4800b under Small Signal Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

11.25 mJ 2

4 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 3

4 hits Apply

DS Breakdown Voltage-Min (1)

30 V 3

4 hits Apply

Drain Current-Max (ID) (1)

6.5 A 4

4 hits Apply

Drain-source On Resistance-Max (1)

18.5 mΩ 3

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

MS-012AA 1

4 hits Apply

R-PDSO-G8 3

4 hits Apply

e0 1 e3 2

4 hits Apply

Manufacturer (2)

Vishay Intertechnologies 1 Vishay Siliconix 3

4 hits Apply

1 2

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

8 3

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 3

4 hits Apply

-55.0 °C 2

4 hits Apply

PLASTIC/EPOXY 3

4 hits Apply

RECTANGULAR 3

4 hits Apply

SMALL OUTLINE 3

4 hits Apply

Not Recommended 1 Obsolete 1 Transferred 2

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

1.3 W 1 2.5 W 1 6.5 W 1

Min (W) - Max (W)

4 hits Apply

Surface Mount (1)

YES 4

4 hits Apply