Parametric results for: si4835 under Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 11

19 hits Apply

DS Breakdown Voltage-Min (1)

30 V 11

19 hits Apply

Drain Current-Max (ID) (4)

7.4 A 2 8 A 2 8.7 A 4 8.8 A 5

Min (A) - Max (A)

19 hits Apply

Drain-source On Resistance-Max (3)

18 mΩ 5 19 mΩ 1 20 mΩ 5

Min (Ω) - Max (Ω)

19 hits Apply

METAL-OXIDE SEMICONDUCTOR 13

19 hits Apply

MS-012AA 2

19 hits Apply

R-PDSO-G8 11

19 hits Apply

e0 2 e3 12

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Manufacturer (6)

Fairchild Semiconductor Corporation 4 Rochester Electronics LLC 1 Silicon Laboratories Inc 4 Skyworks Solutions Inc 2 Vishay Intertechnologies 4 Vishay Siliconix 4

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1 8 3 4

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Number of Elements (1)

1 13

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Number of Terminals (1)

8 11

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ENHANCEMENT MODE 13

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150.0 °C 7

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PLASTIC/EPOXY 11

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RECTANGULAR 11

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SMALL OUTLINE 11

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Active 5 Obsolete 10 Transferred 4

19 hits Apply

No 1 Yes 3

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260 7

19 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 13

19 hits Apply

1 W 1 2.5 W 2 5.6 W 2

Min (W) - Max (W)

19 hits Apply

Surface Mount (1)

YES 13

19 hits Apply