Parametric results for: si8851edb-t2-e1 under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

1 hit Apply

DS Breakdown Voltage-Min (1)

20 V 1

1 hit Apply

Drain-source On Resistance-Max (1)

8.6 mΩ 1

1 hit Apply

METAL-OXIDE SEMICONDUCTOR 1

1 hit Apply

R-PBGA-B30 1

1 hit Apply

Manufacturer (1)

Vishay Intertechnologies 1

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Number of Elements (1)

1 1

1 hit Apply

Number of Terminals (1)

30 1

1 hit Apply

ENHANCEMENT MODE 1

1 hit Apply

150.0 °C 1

1 hit Apply

-55.0 °C 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

GRID ARRAY 1

1 hit Apply

Active 1

1 hit Apply

260 1

1 hit Apply

Polarity/Channel Type (1)

P-CHANNEL 1

1 hit Apply

Surface Mount (1)

YES 1

1 hit Apply