Part # | Manufacturer | Description | Stock | Price | Buy | |
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NE5520379A-EVPW09-A
DISTI #
NE5520379A-EVPW09
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California Eastern Laboratories (CEL) | Sub-GHz Development Tools For NE5520379A-A Power at 900 MHz RoHS: Compliant NE5520379A-EVPW09-A Part Details | 0 |
|
$100.0000 | Order Now NE5520379A-EVPW09-A Part Details |
Part # | Manufacturer | Description | Stock | Price | Buy | |
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NEC Electronics Group | MOSFET Transistor, N-Channel, BEAM LEAD NE5520379A Part Details | 4 |
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$238.0000 / $245.0000 | Buy Now NE5520379A Part Details | |
California Eastern Laboratories (CEL) | MOSFET Transistor, N-Channel, BEAM LEAD NE5520379A Part Details | 660 |
|
$252.0000 / $294.0000 | Buy Now NE5520379A Part Details |
Part # | Manufacturer | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
Renesas Electronics Corporation | 3.2 V OPERATION SILICON RF POWER LDMOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET RoHS: Compliant NE5520379AT1A Part Details | Europe - 13000 | RFQ NE5520379AT1A Part Details |