1E8
vs
1N4006GH
feature comparison
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
GALAXY SEMI-CONDUCTOR CO LTD
|
TAIWAN SEMICONDUCTOR CO LTD
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
|
| Application |
SUPER FAST RECOVERY
|
EFFICIENCY
|
| Breakdown Voltage-Min |
800 V
|
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
2.2 V
|
1 V
|
| JESD-30 Code |
O-PALF-W2
|
O-PALF-W2
|
| Non-rep Pk Forward Current-Max |
30 A
|
30 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
125 °C
|
150 °C
|
| Operating Temperature-Min |
-55 °C
|
-55 °C
|
| Output Current-Max |
1 A
|
1 A
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Rep Pk Reverse Voltage-Max |
800 V
|
800 V
|
| Reverse Current-Max |
5 µA
|
5 µA
|
| Reverse Recovery Time-Max |
0.035 µs
|
|
| Reverse Test Voltage |
800 V
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
2
|
1
|
| Rohs Code |
|
Yes
|
| Package Description |
|
DO-41, 2 PIN
|
| Samacsys Manufacturer |
|
Taiwan Semiconductor
|
| Additional Feature |
|
HIGH RELIABILITY, LOW POWER LOSS
|
| JEDEC-95 Code |
|
DO-204AL
|
| Reference Standard |
|
AEC-Q101
|
| Terminal Finish |
|
PURE TIN
|
|
|
|
Compare 1E8 with alternatives
Compare 1N4006GH with alternatives