1N3329RB vs JAN1N3329RB feature comparison

1N3329RB New England Semiconductor

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JAN1N3329RB Defense Logistics Agency

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Part Life Cycle Code Transferred Active
Ihs Manufacturer NEW ENGLAND SEMICONDUCTOR DEFENSE LOGISTICS AGENCY
Package Description HERMETIC SEALED, DO-5, 1 PIN DO-5, 1 PIN
Reach Compliance Code unknown unknown
Additional Feature HIGH RELIABILITY
Case Connection CATHODE CATHODE
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
Dynamic Impedance-Max 4.5 Ω
JEDEC-95 Code DO-5 DO-5
JESD-30 Code O-MUPM-D1 O-MUPM-D1
Knee Impedance-Max 100 Ω
Number of Elements 1 1
Number of Terminals 1 1
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Package Body Material METAL METAL
Package Shape ROUND ROUND
Package Style POST/STUD MOUNT POST/STUD MOUNT
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 50 W 50 W
Qualification Status Not Qualified Qualified
Reference Voltage-Nom 45 V 45 V
Reverse Current-Max 5 µA
Surface Mount NO NO
Technology ZENER ZENER
Terminal Form SOLDER LUG SOLDER LUG
Terminal Position UPPER UPPER
Voltage Temp Coeff-Max 40.5 mV/°C
Voltage Tol-Max 5% 5%
Working Test Current 280 mA 280 mA
Base Number Matches 9 2
Reference Standard MIL-19500/358E

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