1N3512TR
vs
1N3512
feature comparison
| Pbfree Code |
No
|
|
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
CENTRAL SEMICONDUCTOR CORP
|
INVENSYS SENSOR SYSTEMS
|
| Package Description |
O-PALF-W2
|
|
| Reach Compliance Code |
not_compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Additional Feature |
LOW IMPEDANCE
|
|
| Case Connection |
ISOLATED
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
|
| Diode Type |
ZENER DIODE
|
ZENER DIODE
|
| JEDEC-95 Code |
DO-35
|
|
| JESD-30 Code |
O-PALF-W2
|
|
| JESD-609 Code |
e0
|
e0
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
ROUND
|
|
| Package Style |
LONG FORM
|
|
| Polarity |
UNIDIRECTIONAL
|
|
| Power Dissipation-Max |
0.4 W
|
0.4 W
|
| Qualification Status |
Not Qualified
|
|
| Reference Voltage-Nom |
5.6 V
|
5.6 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
ZENER
|
|
| Terminal Finish |
TIN LEAD
|
Tin/Lead (Sn/Pb)
|
| Terminal Form |
WIRE
|
|
| Terminal Position |
AXIAL
|
|
| Base Number Matches |
1
|
9
|
| Dynamic Impedance-Max |
|
8 Ω
|
| Operating Temperature-Max |
|
200 °C
|
| Voltage Tol-Max |
|
2%
|
| Working Test Current |
|
20 mA
|
|
|
|
Compare 1N3512TR with alternatives