1N4003FL vs GS1DTR-HF feature comparison

1N4003FL Sangdest Microelectronics (Nanjing) Co Ltd

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GS1DTR-HF Sangdest Microelectronics (Nanjing) Co Ltd

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD SANGDEST MICROELECTRONICS (NANJING) CO LTD
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Additional Feature LOW LEAKAGE CURRENT LOW POWER LOSS
Application GENERAL PURPOSE GENERAL PURPOSE
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V 1.1 V
JESD-30 Code R-PDSO-F2 R-PDSO-C2
Non-rep Pk Forward Current-Max 30 A 30 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -65 °C -65 °C
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Rep Pk Reverse Voltage-Max 200 V 200 V
Reverse Current-Max 5 µA 5 µA
Reverse Test Voltage 200 V 200 V
Surface Mount YES YES
Terminal Form FLAT C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1
Package Description R-PDSO-C2
Date Of Intro 2019-04-04
Reverse Recovery Time-Max 2.5 µs

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