1N4003GHR1G vs FR103-T3 feature comparison

1N4003GHR1G Taiwan Semiconductor

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FR103-T3 Sangdest Microelectronics (Nanjing) Co Ltd

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Rohs Code Yes No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD SANGDEST MICROELECTRONICS (NANJING) CO LTD
Package Description O-PALF-W2 O-PALF-W2
Reach Compliance Code not_compliant unknown
ECCN Code EAR99
HTS Code 8541.10.00.80
Additional Feature HIGH RELIABILITY, LOW POWER LOSS HIGH RELIABILITY
Application GENERAL PURPOSE
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95 Code DO-204AL DO-41
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e3
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) 260
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 200 V 200 V
Surface Mount NO NO
Terminal Finish MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Time@Peak Reflow Temperature-Max (s) 10
Base Number Matches 1 3
Moisture Sensitivity Level 1
Qualification Status Not Qualified
Reverse Recovery Time-Max 0.15 µs

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